IRFP260NPBF Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC

Type of transistor: N-MOSFET

Technology: HEXFET

Polarisation: unipolar

Drain-source voltage: 200V

Drain current: 35A

Power dissipation: 300W

Case: TO247AC

Gate-source voltage: ±20V

On-state resistance: 40mΩ

Mounting: THT

Gate charge: 234nC

Kind of package: tube

Kind of channel: enhanced