Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK; ESD
SKU:STB55NF06T4
This product is a high-performance N-MOSFET transistor from STMicroelectronics, designed with SuperMesh™ technology. It offers excellent switching performance thanks to its low on-state resistance of 18mΩ and the ability to handle currents up to 35A.
The unipolar, enhancement channel design ensures efficient operation with a voltage rating of up to 60V and a power dissipation of 110W. Housed in a D2PAK case for surface mounting (SMD), this component also features built-in ESD protection, enhancing its reliability in electrostatically sensitive applications.
The unipolar, enhancement channel design ensures efficient operation with a voltage rating of up to 60V and a power dissipation of 110W. Housed in a D2PAK case for surface mounting (SMD), this component also features built-in ESD protection, enhancing its reliability in electrostatically sensitive applications.
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel, tape
Kind of channel: enhancement
Version: ESD
Manufacturer: STMicroelectronics
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel, tape
Kind of channel: enhancement
Version: ESD
Manufacturer: STMicroelectronics
