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Diode, schottky, microwave,HSMS-286C-TR1G
- Minimum order amount 8.00 €
Tallinn, Peterburi tee 90F
Tallinn, Peterburi tee 90F
Tallinn, Pärnu mnt. 238
Tartu, Lääneringtee 39
Rakvere, Haljala tee 4
Pärnu, Papiniidu 8
The HSMS-286C-TR1G is a 3-pin dual surface-mount microwave Schottky Detector Diode has been designed and optimized for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. This diode is used with DC bias at frequencies above 1.5GHz at lower frequencies, the zero bias HSMS-285x family should be considered. In large signal power or gain control applications (pin>-20dBm), this family is used without bias at frequencies above 4GHz. at lower frequencies, the HSMS-282x family is preferred.
High detection sensitivity
Low FIT (failure in time) rate
Better thermal conductivity for higher power dissipation
5kR Typical video resistance
150°C/W Thermal resistance
150°C Junction temperature
| Type | schottky |
| Case | SOT323 |
| Material | silicon |
| Voltage | 4V |
| Current | 0.001A |
| Number of channels | dual |
