CNX62A Uis=5.3kV Uce=50V Optron
SKU: CNX62A
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The CNX62A is an optically coupled isolator consisting of an infrared light emitting diode (IRED) and a NPN silicon phototransistor. It comes in a standard 6-pin dual in-line plastic package (DIP) with the base pin unconnected. Key Features: * High Current Transfer Ratio (CTR): 40% minimum
* High Isolation Voltage: 5.3 kV RMS, 7.5 kV Peak
* Low Saturation Voltage: Suitable for TTL integrated circuits
* High Collector-Emitter Voltage (BVCEO): 50V minimum
* Base pin unconnected: Improved noise immunity in high EMI environments
* Options:
* 10mm lead spread (add G after part no.)
* Surface mount (add SM after part no.)
* Tape & reel (add SMT&R after part no.) Applications: * DC motor controllers
* Industrial systems controllers
* Signal transmission between systems of different potentials and impedances
The CNX62A provides electrical isolation between input and output, making it suitable for applications where it is necessary to protect sensitive circuits from high voltages or noisy environments. The unconnected base pin improves noise immunity, which is beneficial in high EMI environments. Additional Information: * The parameters and performance indicators of this product are sourced from the internet; in case of discrepancies, please refer to the manufacturer's technical specifications.
* It's recommended to use an input capacitor (typically 10μF) close to the input pin to stabilize the input voltage and an output capacitor (typically 10μF) close to the output pin to stabilize the output voltage. Substitute Products: * CNX62
* 4N35
* PC817
* MOC3021
Isolation Voltage: 5.3 kV RMS, 7.5 kV Peak
Collector-Emitter Voltage (BVCEO): 50 V
Emitter-Collector Voltage (BVECO): 6 V
Forward Current: 60 mA
Reverse Voltage: 6 V
Storage Temperature: -55°C to +150°C
Operating Temperature: -55°C to +100°C
Lead Soldering Temperature: 260°C (for 10 seconds)
Diode Power Dissipation: 105 mW
Output Transistor Power Dissipation: 160 mW
Total Power Dissipation: 200 mW (derate linearly 2.67mW/°C above 25°C)
Collector-Emitter Voltage (BVCEO): 50 V
Emitter-Collector Voltage (BVECO): 6 V
Forward Current: 60 mA
Reverse Voltage: 6 V
Storage Temperature: -55°C to +150°C
Operating Temperature: -55°C to +100°C
Lead Soldering Temperature: 260°C (for 10 seconds)
Diode Power Dissipation: 105 mW
Output Transistor Power Dissipation: 160 mW
Total Power Dissipation: 200 mW (derate linearly 2.67mW/°C above 25°C)