SKU:2420502
The IPA60R280P6XKSA1 is a high-performance N-MOSFET transistor manufactured by INFINEON TECHNOLOGIES. This component utilizes CoolMOS™ P6 technology, designed for efficiency and reliability in power management applications. It features a unipolar polarization and is housed in a TO220FP package, suitable for THT (Through-Hole Technology) mounting.
Technical capabilities include a maximum drain-source voltage of 600V and a continuous drain current of 13.8A. With a power dissipation of 32W and a low on-state resistance of 0.28Ω, this transistor ensures effective power handling. The device operates with an enhancement mode channel and is delivered in tube packaging.
Technical capabilities include a maximum drain-source voltage of 600V and a continuous drain current of 13.8A. With a power dissipation of 32W and a low on-state resistance of 0.28Ω, this transistor ensures effective power handling. The device operates with an enhancement mode channel and is delivered in tube packaging.
Manufacturer: INFINEON TECHNOLOGIES
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
- Minimum order amount 8.00 €
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