SKU:IRLZ44PBF
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Vishay Siliconix N-channel MOSFET transistor. This discrete semiconductor component is designed for through-hole mounting in a TO-220AB package. It supports a maximum drain-to-source voltage of 60 V and a continuous drain current of 50 A. The device has a power dissipation capacity of 150 W and is rated for operation in temperatures ranging from -55°C to 175°C. Its logic-level drive voltage capability (4V to 5V) allows for efficient switching in various power management applications.
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Packaging: Tube
Vgs (Max): ±10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
FET Type: N-Channel
Power Dissipation (Max): 150W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Package / Case: TO-220-3
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Base Product Number: IRLZ44
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Packaging: Tube
Vgs (Max): ±10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
FET Type: N-Channel
Power Dissipation (Max): 150W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Package / Case: TO-220-3
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Base Product Number: IRLZ44
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SMICA-SOT930.50 €Customer price0.4750 €-5%
