AOB66616L N-Channel MOSFET
SKU:AOB66616L
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Image is for illustrative purposes only
The AOB66616L is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor, utilizing AlphaSGTTM Trench Power MOSFET technology.
It is designed to offer efficient power switching performance.
Key Features
- Features low On-Resistance (RDS(ON))
- Provides excellent Figure of Merit (FOM), representing Gate Charge x RDS(ON))
- RoHS Compliant
- Halogen-Free
It is designed to offer efficient power switching performance.
Key Features
- Features low On-Resistance (RDS(ON))
- Provides excellent Figure of Merit (FOM), representing Gate Charge x RDS(ON))
- RoHS Compliant
- Halogen-Free
FET Type: N-Channel
Gate Charge (Qg@10V): 60nC
Gate Threshold Voltage (Vgs(th)@Id): 2.4V
ID (at VGS=10V, Ta): 38.5A
ID (at VGS=10V, Tc): 140A
Input Capacitance (Ciss@30V): 2.87nF
Operating Temperature: -55℃~+150℃
Package: TO-263
Power Dissipation (Ta): 8.3W
Power Dissipation (Tc): 125W
RDS(ON) (at VGS=10V): < 3.2mΩ
RDS(ON) (at VGS=6V): < 4.6mΩ
Reverse Transfer Capacitance (Crss@30V): 38pF
Technology: Trench Power MOSFET - AlphaSGTTM
VDS: 60V
Gate Charge (Qg@10V): 60nC
Gate Threshold Voltage (Vgs(th)@Id): 2.4V
ID (at VGS=10V, Ta): 38.5A
ID (at VGS=10V, Tc): 140A
Input Capacitance (Ciss@30V): 2.87nF
Operating Temperature: -55℃~+150℃
Package: TO-263
Power Dissipation (Ta): 8.3W
Power Dissipation (Tc): 125W
RDS(ON) (at VGS=10V): < 3.2mΩ
RDS(ON) (at VGS=6V): < 4.6mΩ
Reverse Transfer Capacitance (Crss@30V): 38pF
Technology: Trench Power MOSFET - AlphaSGTTM
VDS: 60V
