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BUZ11-MBR N-FET 50V 36A 120W

BUZ11-MBR N-FET 50V 36A 120W

  • Tootekood: BUZ11-MBR
Pealadu, Peterburi tee 90F, Tallinn 3
Järve keskuse Oomipood, Pärnu mnt. 238, Tallinn 2
BUZ11-MBR N-FET 50V 36A 120W
Tüüpn-mosfet
Pinge50V
Vool36A
Võimsus120W

Kliendid, kes ostsid selle toote, ostsid ka

Diode: transil; 1.5kW; 15V; 74A; bidirectional; ±5%; Ø5,4x7,5mm
Diode: transil; 1.5kW; 15V; 74A; bidirectional; ±5%; Ø5,4x7,5mm

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0.4646€
STMICROELECTRONICS - TSM103WIDT - Operational Amplifier, Dual, 2 Amplifier, 0.9 MHz, 0.4 V/µs, 3V to 32V, ± 1.5V to ± 16V, SOIC
STMICROELECTRONICS - TSM103WIDT - Operational Amplifier, Dual, 2 Amplifier, 0.9 MHz, 0.4 V/µs, 3V to 32V, ± 1.5V to ± 16V, SOIC

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0.76€ 0.76€
KA78R05 POS V-REG 5V 1A +RESET
KA78R05 POS V-REG 5V 1A +RESET

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1.92€
Driver; current sensor,low-side; -2÷1A; 1W; Channels: 1; DIP8; 5V
Driver; current sensor,low-side; -2÷1A; 1W; Channels: 1; DIP8; 5V

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3.93€
100R 0.6W 1% metalfilm
100R 0.6W 1% metalfilm

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0.20€
TE CONNECTIVITY - LR1F18R - Through Hole Resistor, 18 ohm, LR Series, 600 mW, ± 1%, Axial Leaded, 350 V
TE CONNECTIVITY - LR1F18R - Through Hole Resistor, 18 ohm, LR Series, 600 mW, ± 1%, Axial Leaded, 350 V

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0.0663€ 0.0663€
TE CONNECTIVITY - LR1F820K - Through Hole Resistor, 820 kohm, LR Series, 600 mW, ± 1%, Axial Leaded, 350 V
TE CONNECTIVITY - LR1F820K - Through Hole Resistor, 820 kohm, LR Series, 600 mW, ± 1%, Axial Leaded, 350 V

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0.1180€ 0.1180€
Operational amplifier; 3MHz; 2.7÷16V; Channels: 2; SO8
Operational amplifier; 3MHz; 2.7÷16V; Channels: 2; SO8

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2.05€
TIP36C Si-P 100V 25A 125W 3MHz
TIP36C Si-P 100V 25A 125W 3MHz

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2.50€
TIP35C Si-N 100V 25A 125W
TIP35C Si-N 100V 25A 125W

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3.00€

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