Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; D
SKU:IRLR2905ZTRPBF
New
Image is for illustrative purposes only
The Infineon IRLR2905ZTRPBF is an N-channel HEXFET® power MOSFET. It utilizes advanced processing technology to achieve ultra-low on-resistance.
Key Features
High junction temperature rating: Up to 175°C
Fast switching speed
Enhanced repetitive avalanche rating
Logic Level gate drive capability
Supplied in a DPAK (TO-252) package
Applications
Suitable for a wide range of power applications.
Key Features
High junction temperature rating: Up to 175°C
Fast switching speed
Enhanced repetitive avalanche rating
Logic Level gate drive capability
Supplied in a DPAK (TO-252) package
Applications
Suitable for a wide range of power applications.
Transistor Type: N-MOSFET
Polarity: N-Channel
Vds: 55V
Id @ Tc=25°C (Package Limited): 43A
Idm (Pulsed Drain Current): 240A
Rds(on) @ Vgs=10V: 13.5 mOhms
Pd @ Tc=25°C: 110W
Operating Temperature Range (Tj, Tstg): -55°C to +175°C
Package Type: DPAK (TO-252)
Polarity: N-Channel
Vds: 55V
Id @ Tc=25°C (Package Limited): 43A
Idm (Pulsed Drain Current): 240A
Rds(on) @ Vgs=10V: 13.5 mOhms
Pd @ Tc=25°C: 110W
Operating Temperature Range (Tj, Tstg): -55°C to +175°C
Package Type: DPAK (TO-252)
