TCDT1101G
SKU: TCDT1101G
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Product Overview
The TCDT1101G from Vishay Semiconductors is a high-performance optocoupler designed for reliable electrical isolation in diverse applications. This device integrates a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, all within a compact 6-pin plastic dual inline package (DIP).
Key Features
- Optocoupler Type: Transistor Output
- High Isolation Voltage: 5000 Vrms
- Current Transfer Ratio (CTR): 40% to 80%
- No base terminal connection: Offers improved noise immunity for stable operation.
- Package: DIP-6
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications and Benefits
- Switch-mode power supplies: Provides essential electrical isolation between the primary and secondary sides, enhancing safety and performance.
- Line receiver: Effectively isolates sensitive circuitry from potentially damaging voltage spikes and surges on the input line.
- Computer peripheral interface: Enables secure and reliable communication between computers and peripherals.
- Microprocessor system interface: Isolates the microprocessor from external circuits, protecting it from interference and damage.
- Circuits for safe protective separation against electrical shock: Suited for applications requiring reinforced isolation according to safety class II, for mains voltage ≤ 300 V (class I-IV) or ≤ 600 V (class I-III) according to DIN EN 60747-5-5.
Agency Approvals
The TCDT1101G has received the following agency approvals, demonstrating its commitment to safety and quality:
- UL1577, file no. E52744, double protection
- BSI IEC 60950; IEC 60065 pending
- DIN EN 60747-5-5 (VDE0884)
- FIMKO
Important Safety Information
The TCDT1101G is designed for safe electrical isolation only within its specified safety ratings. Ensuring compliance with these ratings through the implementation of suitable protective circuits is crucial for safe and reliable operation.
The TCDT1101G from Vishay Semiconductors is a high-performance optocoupler designed for reliable electrical isolation in diverse applications. This device integrates a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, all within a compact 6-pin plastic dual inline package (DIP).
Key Features
- Optocoupler Type: Transistor Output
- High Isolation Voltage: 5000 Vrms
- Current Transfer Ratio (CTR): 40% to 80%
- No base terminal connection: Offers improved noise immunity for stable operation.
- Package: DIP-6
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications and Benefits
- Switch-mode power supplies: Provides essential electrical isolation between the primary and secondary sides, enhancing safety and performance.
- Line receiver: Effectively isolates sensitive circuitry from potentially damaging voltage spikes and surges on the input line.
- Computer peripheral interface: Enables secure and reliable communication between computers and peripherals.
- Microprocessor system interface: Isolates the microprocessor from external circuits, protecting it from interference and damage.
- Circuits for safe protective separation against electrical shock: Suited for applications requiring reinforced isolation according to safety class II, for mains voltage ≤ 300 V (class I-IV) or ≤ 600 V (class I-III) according to DIN EN 60747-5-5.
Agency Approvals
The TCDT1101G has received the following agency approvals, demonstrating its commitment to safety and quality:
- UL1577, file no. E52744, double protection
- BSI IEC 60950; IEC 60065 pending
- DIN EN 60747-5-5 (VDE0884)
- FIMKO
Important Safety Information
The TCDT1101G is designed for safe electrical isolation only within its specified safety ratings. Ensuring compliance with these ratings through the implementation of suitable protective circuits is crucial for safe and reliable operation.
Number of Channels: 1
Output Type: Transistor
Isolation Voltage: 5000 Vrms
Collector-Emitter Voltage (Vce): 32V
Input Forward Current: 50mA
Current Transfer Ratio (CTR): 40% to 80% @ If=10mA
Turn-On Time (Typ): 11 µs
Turn-Off Time (Typ): 7 µs
Rise Time (Typ): 7 µs
Fall Time (Typ): 6.7 µs
Package: DIP-6
Lead Spacing: 10.16 mm (0.4 inch)
Output Type: Transistor
Isolation Voltage: 5000 Vrms
Collector-Emitter Voltage (Vce): 32V
Input Forward Current: 50mA
Current Transfer Ratio (CTR): 40% to 80% @ If=10mA
Turn-On Time (Typ): 11 µs
Turn-Off Time (Typ): 7 µs
Rise Time (Typ): 7 µs
Fall Time (Typ): 6.7 µs
Package: DIP-6
Lead Spacing: 10.16 mm (0.4 inch)
tcdt1100.pdf
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