Image is for illustrative purposes only
4N32 optron 3.75kV 30V
SKU: 4N32
- 1.00 €
-
- Customer price 0.95 € -5%
- Log in and get at least a 5% discount
Pealadu
Tallinn, Peterburi tee 90F
Tallinn, Peterburi tee 90F
0 pcs
Peterburi tee Oomipood
Tallinn, Peterburi tee 90F
Tallinn, Peterburi tee 90F
0 pcs
Järve keskuse Oomipood
Tallinn, Pärnu mnt. 238
Tallinn, Pärnu mnt. 238
6 pcs
Lõunakeskuse Oomipood
Tartu, Lääneringtee 39
Tartu, Lääneringtee 39
0 pcs
Põhjakeskuse Oomipood
Rakvere, Haljala tee 4
Rakvere, Haljala tee 4
0 pcs
Kaubamajaka Oomipood
Pärnu, Papiniidu 8
Pärnu, Papiniidu 8
0 pcs
The 4N32 is a high-performance 6-pin photodarlington optocoupler, designed for applications demanding exceptional isolation and reliable switching. This device provides superior performance and longevity compared to traditional relay solutions.
General Information
The 4N32 features a gallium arsenide infrared (GaAs) LED emitter and a silicon planar photodarlington sensor, ensuring reliable operation and excellent isolation between input and output circuits.
Key Features
- High sensitivity to low input drive current
- Very high current transfer ratio (500% min)
- High isolation voltage (3.75 kV)
- High isolation resistance (10^11 Ω typical)
- Meets or exceeds JEDEC Registered Specifications
- Available with VDE 0884 approval as a test option
- DC input with transistor output
- Operating temperature range: -55°C to +100°C
- RoHS and REACH Compliance
- Halogen Free Compliance (Optional)
- MSL class 1
Applications
- Low power logic circuits
- Telecommunications equipment
- Portable electronics
- Solid state relays
- Switch mode power supplies
- Computer peripheral interface
- Microprocessor system interface
- Interfacing coupling systems of different potentials and impedances
The 4N32 offers a superior alternative to reed and mercury relays, delivering extended operational life, high-speed switching capabilities, and the elimination of magnetic fields. It is conveniently packaged in a standard plastic DIP package.
General Information
The 4N32 features a gallium arsenide infrared (GaAs) LED emitter and a silicon planar photodarlington sensor, ensuring reliable operation and excellent isolation between input and output circuits.
Key Features
- High sensitivity to low input drive current
- Very high current transfer ratio (500% min)
- High isolation voltage (3.75 kV)
- High isolation resistance (10^11 Ω typical)
- Meets or exceeds JEDEC Registered Specifications
- Available with VDE 0884 approval as a test option
- DC input with transistor output
- Operating temperature range: -55°C to +100°C
- RoHS and REACH Compliance
- Halogen Free Compliance (Optional)
- MSL class 1
Applications
- Low power logic circuits
- Telecommunications equipment
- Portable electronics
- Solid state relays
- Switch mode power supplies
- Computer peripheral interface
- Microprocessor system interface
- Interfacing coupling systems of different potentials and impedances
The 4N32 offers a superior alternative to reed and mercury relays, delivering extended operational life, high-speed switching capabilities, and the elimination of magnetic fields. It is conveniently packaged in a standard plastic DIP package.
Clearance Distance: ≥ 7.5mm (S/SL Type) or ≥ 8.0mm (M/SLM Type)
Collector-Emitter Voltage (VCEO): 30 V
Current Transfer Ratio (CTR): 500% minimum
Distance Through Isolation: ≥ 0.4mm
External Creepage: ≥ 7.4mm
Forward Current (IF): 60 mA
Isolation Voltage: 5300 Vrms
Operating Temperature: -55°C to +100°C
Power Dissipation: 100 mW
Saturation Voltage (VCE(sat)): 1.0 V
Collector-Emitter Voltage (VCEO): 30 V
Current Transfer Ratio (CTR): 500% minimum
Distance Through Isolation: ≥ 0.4mm
External Creepage: ≥ 7.4mm
Forward Current (IF): 60 mA
Isolation Voltage: 5300 Vrms
Operating Temperature: -55°C to +100°C
Power Dissipation: 100 mW
Saturation Voltage (VCE(sat)): 1.0 V
4n32.pdf
Download
Download
